@article{liu_2024,
doi:10.1126/sciadv.adq7892,
author = {Fengdeng Liu  and Zhifei Yang  and David Abramovitch  and Silu Guo  and K. Andre Mkhoyan  and Marco Bernardi  and Bharat Jalan },
title = {Deep-ultraviolet transparent conducting SrSnO<sub>3</sub> via heterostructure design},
journal = {Science Advances},
volume = {10},
number = {44},
pages = {eadq7892},
year = {2024},
doi = {10.1126/sciadv.adq7892},
URL = {https://www.science.org/doi/abs/10.1126/sciadv.adq7892},
eprint = {https://www.science.org/doi/pdf/10.1126/sciadv.adq7892},
abstract = {Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. Here, we used a thin heterostructure design to facilitate high conductivity due to the low electron mass and relatively weak electron-phonon coupling, while the atomically thin films ensured high transparency. We used a heterostructure comprising SrSnO3/La:SrSnO3/GdScO3 (110), and applied electrostatic gating, which allow us to effectively separate charge carriers in SrSnO3 from dopants and achieve phonon-limited transport behavior in strain-stabilized tetragonal SrSnO3. This led to a modulation of carrier density from 1018 to 1020 cm−3, with room temperature mobilities ranging from 40 to 140 cm2 V−1 s−1. The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room temperature mobility could be further increased with higher electron density. In addition, the sample exhibited 85\% optical transparency at a 300-nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in DUV regime. An oxide heterostructure design achieves record room temperature mobility and high DUV transparency.}}