@article{truttmann_combined_2021,
	title = {Combined experimental-theoretical study of electron mobility-limiting mechanisms in {SrSnO3}},
	volume = {4},
	issn = {2399-3650},
	url = {https://doi.org/10.1038/s42005-021-00742-w},
	doi = {10.1038/s42005-021-00742-w},
	abstract = {The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide NdxSr1−xSnO3 (SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 1018 cm−3 to 2.0 × 1020 cm−3. Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, {\textasciitilde}70 cm2 V−1 s−1, among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm2 V−1 s−1 depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics.},
	number = {1},
	journal = {Communications Physics},
	author = {Truttmann, Tristan K. and Zhou, Jin-Jian and Lu, I-Te and Rajapitamahuni, Anil Kumar and Liu, Fengdeng and Mates, Thomas E. and Bernardi, Marco and Jalan, Bharat},
	month = nov,
	year = {2021},
	pages = {241},
}